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Monolithic Integrated (Dual) Bidirectional Amplifier O599
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Monolithic Integrated (Dual) Bidirectional Amplifier O592

The O592 is a GaAs monolithic integrated low bi-directional amplifier chip that operates from 2 to 20 GHz and provides 14dB gain and 13dBm P1dB output power at a +5V, 65mA operating current. The amplifier chip uses on-chip via metallization process to ensure good grounding, the back of the chip is metallized, suitable for eutectic sintering or conductive adhesive bonding process.
Monolithic Integrated (Dual) Bidirectional Amplifier O599
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Monolithic Integrated (Dual) Bidirectional Amplifier O593

The O593 is a GaAs monolithic integrated bi-directional amplifier chip operating from 4.0-8.0GHz. It operates from a single +5V supply and provides 17dB of gain and 13dBm of P1dB output power at a 70mA operating current. The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.