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Monolithic Integrated (Dual) Bidirectional Amplifier O599
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Monolithic Integrated (Dual) Bidirectional Amplifier O560

The O560 is a GaAs monolithic integrated bi-directional amplifier chip working in 8.0-12.0GHz. The transmit path can provide 27dB gain and 19.5dBm P1dB output power at a +5V and 175mA operating current. The receive path is at +5V and 55mA. At operating current, it provides 26dB gain and P1dB output power over 8dBm. The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O599
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Monolithic Integrated (Dual) Bidirectional Amplifier O589

The O589 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1.0 to 4.5 GHz. It provides 13dB of gain and 17dBm of P1dB output power at +5V and 70mA operating current. The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O599
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Monolithic Integrated (Dual) Bidirectional Amplifier O597

The O597 is a 1.0-3.0GHz GaAs monolithic integrated bi-directional amplifier chip that operates from a single +5V supply and provides 24dB gain and 16dBm P1dB output power at 60mA operating current. The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.