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GaAs Monolithic Integrated Power Amplifier O243
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GaAs Monolithic Integrated Power Amplifier O212

The O212 is a GaAs monolithic integrated power amplifier chip operating at 12.7-15.4 GHz delivering 20dB of power gain and 32dBm of saturated output power with 100us pulse width, 10% duty cycle, and + 6V operation. The power added efficiency 28%. Integrated power detector, simplifying the application circuit. The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O243
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GaAs Monolithic Integrated Power Amplifier O214

The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage. The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.