选择下方产品分类进入筛选页面 Showing 1 - 16 of 201 results

Showing 1–16 of 201 results

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GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1600

The O1600 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6 to 18 GHz. The isolation is greater than 15 dB, and is ideally suited for microwave hybrid integrated circuits and multiple applications. Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1601

The O1601 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 0.5~1.5GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1602

O1602 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1.0~3.0 GHz. The isolation degree is more than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1603

O1603 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.0~6.0GHz, and the isolation is greater than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1604

O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1607

O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1608

The O1608 GaAs monolithic 0 degree power splitter has low insertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 8 to 12 GHz. The isolation is greater than 17 dB, and the static level is Class 1C. It is ideally suited for applications. Microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1639

O1639 A GaAs monolithic chipset successfully divided into phase-shifted chips, featuring low insertion loss, high-precision phase shift, small amplitude fluctuation, and excellent port standing wave characteristics in the frequency range of 1.2 to 2.4 GHz, making it ideal for applications. Microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O1649

The O1649 GaAs monolithic 0 degree power splitter has lowinsertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 6.0 to 18 GHz. The isolation is greater than 17 dB, and the static level is Class 1B. It is very suitable for applications Microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O490

The O490 type GaAs monolithic 0 degree power splitter has low insertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 0.5 to 1.5 GHz. The insertion loss in the band is less than 1 dB, making it ideal for microwave applications. Hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O491

O491 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1~3 GHz. The isolation degree is more than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O492

The O492 type GaAs monolithic 0 degree power splitter has a low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 6 GHz, and the isolation is greater than 13 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O493

The O493 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3~9 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O494

O494 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18 GHz. The isolation degree is more than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O495

O495 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 12~26.5 GHz. The isolation degree is more than 15dB, and it is very suitable for microwave hybrid integrated circuits and multi-chips. Module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O496

The O496 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 18~40 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.