选择下方产品分类进入筛选页面 Showing 1 - 16 of 23 results
ImageSKUInput P-0.1 (dB)Insertion Loss (dB)Isolation (dB)Max. Frequency (GHz)Min. Frequency (GHz)Return Loss RFC(ON)PriceBuyhf:att:pa_input-p-0-1-dbhf:att:pa_insertion-loss-dbhf:att:pa_isolation-dbhf:att:pa_max-frequency-ghzhf:att:pa_min-frequency-ghzhf:att:pa_return-loss-rfcon

Showing 1–16 of 23 results

Show sidebar
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O1003

O1003 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 11 ~ 17GHz. The switching chip can provide less than 1.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O1017D

O1017D is an Absorption GaAs pHEMT single-pole, double-throw switch chip with operating frequency covering DC~20GHz. The switching chip can provide less than 1.6dB insertion loss over the entire operating frequency range. Use 0/-5V logic control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O110

O110 is an absorption type gallium arsenide pHEMT single-pole single-throw switch chip, working frequency covers DC ~ 20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O111

O111 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 6GHz. The switching chip can provide less than 1.5dB insertion loss and greater than 60dB isolation across the operating requency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use.The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O112

O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O113

O113 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC~20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 45dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O114

O114 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 30GHz. The switch chip can provide less than 2.2dB insertion loss and greater than 26dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O116

O116 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 100M~4GHz. The switch chip can provide less than 1.2dB insertion loss and greater than 38dB isolation across the operating frequency band. Using 0/+5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O117

O117 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 100M~6GHz. The switching chip can provide less than 0.8dB insertion loss and greater than 30dB isolation across the operating frequency band. Using 0/+5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O118

O118 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 12GHz. The switch chip can provide less than 1.0dB insertion loss and greater than 36dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O119

O119 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 15GHz. The switch chip can provide less than 1.5dB insertion loss and greater than 38dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O124

O124 is an absorption GaAs pHEMT single-pole, eight-throw switch chip with an operating frequency of DC to 10 GHz. The switch chip provides greater than 50dB isolation and less than 3dB insertion loss over the entire operating frequency range. Built-in 3:8 decoder, using -5V + TTL control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O125

O125 is an absorption GaAs pHEMT single-pole, eight-throw switch chip, operating frequency covering DC ~ 35GHz. The switch chip provides greater than 30dB isolation and less than 3.3dB insertion loss over the entire operating frequency range. Built-in 2:4 decoder, using -5V + TTL control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O127

O127 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 15GHz. The switch chip can provide less than 2.5dB insertion loss and greater than 55dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O129

O129 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 40GHz. The switch chip can provide less than 2.5dB insertion loss and more than 25dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
Close

GaAs Monolithic Integrated Switch O133

O133 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 20 ~ 40GHz. The switch chip can provide less than 1.6dB insertion loss and greater than 25dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.