选择下方产品分类进入筛选页面 Showing all 6 results
ImageSKUInput return loss (dB)Max. Frequency (GHz)Min. Frequency (GHz)Output power (dBm)Output return loss (dB)Saturated Output Power (dBm)Saturation Output Power (dBm)Small Signal Gain (dB)PriceBuyhf:att:pa_input-return-loss-dbhf:att:pa_max-frequency-ghzhf:att:pa_min-frequency-ghzhf:att:pa_output-power-dbmhf:att:pa_output-return-loss-dbhf:att:pa_saturated-output-power-dbmhf:att:pa_saturation-output-power-dbmhf:att:pa_small-signal-gain-db

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GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O562

The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O568

The O568 is a GaN monolithically integrated driver amplifier chip operating at 2.0-6.0GHz delivering 25dB of power gain and 30dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O570

The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O571

The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O575

The O575 is a GaN monolithic integrated driver amplifier chip, dual power supply +28 V work, operating frequency coverage 2 ~ 6GHz. At 130mA operating current, can provide 18dB power gain, 26dBm of saturated output power. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O579

The O579 is a GaN monolithically integrated driver amplifier chip operating at 1.2 to 1.6 GHz delivering 23dB of power gain and 26.5dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.