GaN 氮化镓

The O258 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 22dB power gain and 43dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. Power-added efficiency 45%. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

The O259 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB of power gain and 41dBm of saturated output power. Power-added efficiency 48%. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.