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5G
GaAs Monolithic Integrated 0 Degree Power O1600
The O1600 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6 to 18 GHz. The isolation is greater than 15 dB, and is ideally suited for microwave hybrid integrated circuits and multiple applications. Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1601
The O1601 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 0.5~1.5GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1602
O1602 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1.0~3.0 GHz. The isolation degree is more than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1603
O1603 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.0~6.0GHz, and the isolation is greater than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1604
O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1607
O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1608
The O1608 GaAs monolithic 0 degree power splitter has low insertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 8 to 12 GHz. The isolation is greater than 17 dB, and the static level is Class 1C. It is ideally suited for applications. Microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1639
O1639 A GaAs monolithic chipset successfully divided into phase-shifted chips, featuring low insertion loss, high-precision phase shift, small amplitude fluctuation, and excellent port standing wave characteristics in the frequency range of 1.2 to 2.4 GHz, making it ideal for applications. Microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1649
The O1649 GaAs monolithic 0 degree power splitter has lowinsertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 6.0 to 18 GHz. The isolation is greater than 17 dB, and the static level is Class 1B. It is very suitable for applications Microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O490
The O490 type GaAs monolithic 0 degree power splitter has low insertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 0.5 to 1.5 GHz. The insertion loss in the band is less than 1 dB, making it ideal for microwave applications. Hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O491
O491 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1~3 GHz. The isolation degree is more than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O492
The O492 type GaAs monolithic 0 degree power splitter has a low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 6 GHz, and the isolation is greater than 13 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O493
The O493 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3~9 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O494
O494 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18 GHz. The isolation degree is more than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O495
O495 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 12~26.5 GHz. The isolation degree is more than 15dB, and it is very suitable for microwave hybrid integrated circuits and multi-chips. Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O496
The O496 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 18~40 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O497
The O497 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 18 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O498
O498 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O499
O499 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1~2GHz, and the isolation is greater than 25dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O500
The O500 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 8 to 12 GHz. The isolation is greater than 15 dB, and it is very suitable for microwave hybrid integrated circuits and many applications. Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O501
The O501 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 14 to 18 GHz. The isolation is greater than 15 dB, and is very suitable for microwave hybrid integrated circuits and multiple applications. Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O502
The O502 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 12~18 GHz. The isolation degree is more than 18 dB, and it is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O505
O505 type GaAs monolithic 4-way zero-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.5~6.0GHz, and the isolation is more than 15dB, which is very suitable for microwave hybrid integrated circuits and Multi-chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O506
O506 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18GHz. The isolation degree is more than 17dB, and it is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O507
O507 type GaAs monolithic 4-way zero-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 22~32 GHz. The isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many applications. Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O508
O508 type GaAs monolithic 4-way zero-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O509
O509 type GaAs monolithic 4-way zero-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
O510 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range from DC to 40 GHz, and the isolation is greater than 15dB. It is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Power Amplifier O210
The O210 is a GaAs monolithic integrated power amplifier chip operating at 6.8-9.0 GHz delivering 23dB of power gain and 33dBm of saturated output power with 100us pulse width, 10% duty cycle and + 6V operation. The power added efficiency 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O212
The O212 is a GaAs monolithic integrated power amplifier chip operating at 12.7-15.4 GHz delivering 20dB of power gain and 32dBm of saturated output power with 100us pulse width, 10% duty cycle, and + 6V operation. The power added efficiency 28%. Integrated power detector, simplifying the application circuit.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O214
The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O220
The O220 is a GaAs monolithic integrated power amplifier chip operating at 15.0-17.5 Ghz delivering 20dB of power gain and 36dBm of saturated output power with 100us pulse width, 10% duty cycle, and +8 V operation. The power added efficiency 25%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222
The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222G
The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O224
The O224 is a GaAs monolithic integrated power amplifier operating at 12.8 to 14.6GHz and delivers 23dB of power gain and 32dBm of saturated output power at a + 5V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O227
The O227 is a GaAs monolithic integrated power amplifier chip operating at 16.2-17.6 Ghz and delivering 19dB of power gain and 34.0dBm of saturated output power at a pulse width of 100us, duty cycle of 10%, and operating voltage of + 8V. The power added Efficiency of 29%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O234
The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O238
The O238 is a GaAs monolithic integrated power amplifier chip operating at 24.2-27.0GHz delivering 16dB of power gain and 33dBm of saturated output power at 6V with 27% additional power efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O239
The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O241
The O241 is a 1.2-1.4GHz GaAs monolithic integrated power amplifier chip, which provides 21dB power gain and 26dBm saturated output power at + 5V operating voltage with power added efficiency of 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip is metallized for eutectic sintering.
GaAs Monolithic Integrated Power Amplifier O242
The O242 is a GaAs monolithic integrated power amplifier chip operating at 2.2 ~ 3.5GHz, which provides 22dB power gain and 29dBm saturated output power at + 9V operating voltage with power added efficiency of 35%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O243
The O243 is a 1.2 ~ 1.4GHz GaAs monolithic integrated power amplifier chip that provides 22dB power gain and 26dBm saturated output power at +5 V operating voltage with 36% power added efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Switch O1003
O1003 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 11 ~ 17GHz. The switching chip can provide less than 1.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O1017D
O1017D is an Absorption GaAs pHEMT single-pole, double-throw switch chip with operating frequency covering DC~20GHz. The switching chip can provide less than 1.6dB insertion loss over the entire operating frequency range. Use 0/-5V logic control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as
low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O110
O110 is an absorption type gallium arsenide pHEMT single-pole single-throw switch chip, working frequency covers DC ~ 20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O111
O111 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 6GHz. The switching chip can provide less than 1.5dB insertion loss and greater than 60dB isolation across the operating requency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use.The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O112
O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O113
O113 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC~20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 45dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.