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无源产品
5G
Monolithic Integrated (Dual) Bidirectional Amplifier O594
The O594 is a GaAs monolithic integrated bi-directional amplifier chip operating from 7.0 to 13.0 GHz. It operates from a single +5V supply and provides 18dB gain and 10dBm P1dB output power at 50mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1193
The O1193 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 24dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 40%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O241
The O241 is a 1.2-1.4GHz GaAs monolithic integrated power amplifier chip, which provides 21dB power gain and 26dBm saturated output power at + 5V operating voltage with power added efficiency of 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip is metallized for eutectic sintering.
GaN Monolithic Integrated Power Amplifier O251
The O251 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.5GHz. It provides 22dB power gain and 36dBm saturated output power at a continuous wave, +28V operating voltage, and a power-added efficiency of 48%.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O234
The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O571
The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O1194
The O1194 is a GaN monolithic integrated power amplifier chip working on 1.2-1.6GHz. It provides 26dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10% and +28V operating voltage. Power-added efficiency 50%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Driver Amplifier O579
The O579 is a GaN monolithically integrated driver amplifier chip operating at 1.2 to 1.6 GHz delivering 23dB of power gain and 26.5dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.