Monolithic Integrated (Dual) Bidirectional Amplifier O594
The O594 is a GaAs monolithic integrated bi-directional amplifier chip operating from 7.0 to 13.0 GHz. It operates from a single +5V supply and provides 18dB gain and 10dBm P1dB output power at 50mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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GaAs Monolithic Integrated Power Amplifier O214
The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O234
The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1194
The O1194 is a GaN monolithic integrated power amplifier chip working on 1.2-1.6GHz. It provides 26dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10% and +28V operating voltage. Power-added efficiency 50%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O238
The O238 is a GaAs monolithic integrated power amplifier chip operating at 24.2-27.0GHz delivering 16dB of power gain and 33dBm of saturated output power at 6V with 27% additional power efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O568
The O568 is a GaN monolithically integrated driver amplifier chip operating at 2.0-6.0GHz delivering 25dB of power gain and 30dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O222G
The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1196
The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O1198
The O1198 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.0GHz. It provides 20.5dB power gain and 40.5dBm saturated output power at continuous wave and +28V operating voltage, and the
power-added efficiency is 47%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.