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腔体滤波器
无源产品
5G
Integrated Low Noise Amplifier O281SM4
The O281SM4 is a low noise amplifier operating at 5-14GHz. It provides 19dB gain and 19dBm P1dB output power at 150mA operating current.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Low Noise Amplifier O291SM5
The O291SM5 is a GaAs integrated low noise amplifier operating from 8 to 12 GHz. At +5V operating voltage, it provides 19dB small signal gain, 1.7dB noise figure, and output third-order intercept point above +20dBm.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Monolithic Integrated (Dual) Bidirectional Amplifier O590
The O590 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1 to 5 GHz. It provides 19dB of gain and 16dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.