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接头&转接头
校准件
腔体滤波器
无源产品
5G
Integrated Low Noise Amplifier O290SM4
The O290SM4 is a low noise amplifier operating from 6 to 13 GHz. 42dB operating current, 21dB gain, 9dBm P1 output power.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Low Noise Amplifier O290SM5H
The O290SM5H is a low noise amplifier operating from 6 to 13 GHz. At a +5V operating voltage, it provides 21dB of small signal gain, 10dBm of P-1 output power, and a typical noise figure of 1.5dB.
The amplifier uses 5x5mm surface-mount non-leaded ceramic package, hermetically sealed package, suitable for reflow soldering installation process.
Monolithic Integrated (Dual) Bidirectional Amplifier O598
The O598 is a 1.0-3.0GHz GaAs monolithic integrated bi-directional amplifier chip. It operates from a single +5V supply and provides 21dB gain and 15.5dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O599
The O599 is a GaAs monolithic integrated bi-directional amplifier chip operating from 3.0-7.0GHz. It operates from a single +5V supply and provides 21dB gain and 18dBm P1dB output power at 80mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.