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无源产品
5G
Integrated Low Noise Amplifier O279SM4
The O279SM4 is a low noise amplifier operating at 2-6GHz. Built-in bias circuit provides 24dB gain, 12dBm P1dB output power, and 1.5dB in-band noise figure at 45mA.
The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation. The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Low Noise Amplifier O282SM5H
The O282SM5H is a low noise amplifier operating from 5 to 6 GHz. At a +5V operating voltage, it provides 24dB of small signal gain, 11dBm of P-1 output power, and a typical noise figure of 1.0dB.
Monolithic Integrated (Dual) Bidirectional Amplifier O595
The O595 is a GaAs monolithic integrated bi-directional amplifier chip operating from 0.5-2.0GHz. It operates from a single +5V supply and provides 24dB gain and 16dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O597
The O597 is a 1.0-3.0GHz GaAs monolithic integrated bi-directional amplifier chip that operates from a single +5V supply and provides 24dB gain and 16dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.