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O110 is an absorption type gallium arsenide pHEMT single-pole single-throw switch chip, working frequency covers DC ~ 20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.