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Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O1195SM7H

The O1195SM7H is a GaN integrated power amplifier operating from 4.4 to 5.1 Ghz. At +28V operating voltage, it provides 19dB of power gain, 40dBm of saturated output power, and 47% of power-added efficiency. The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O222GSM7H

The O222GSM7H is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 42% of power-added efficiency at a +8V operating voltage. The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O222SM5

The O222SM5 is a GaAs pHEMT monolithic integrated power amplifier with an operating frequency of 8-12 GHz. Under the +8V operating voltage, 20% 0dB gain, +29dBm saturated output power and 28% power additional efficiency can be provided. The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O259SM7H
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Integrated Power Amplifier O253SM7H

The O253SM7H is a GaN integrated power amplifier operating from 8 to 12 GHz. With a +28V operating voltage, it provides 22dB of power gain, 43dBm of saturated output power, and 38% power-added efficiency. The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.