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接头&转接头
校准件
腔体滤波器
无源产品
5G
Integrated Power Amplifier O1196SM7H
The O1196SM7H is a GaN integrated power amplifier operating from 7 to 9 GHz.It provides 21dB of power gain, 41dBm of saturated output power, and 42% of power-added efficiency at a +28V operating voltage.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O222GSM5
The O222GSM5 is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 35% power-added efficiency at a +8V operating voltage.
The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.