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GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O1003

O1003 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 11 ~ 17GHz. The switching chip can provide less than 1.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O118

O118 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 12GHz. The switch chip can provide less than 1.0dB insertion loss and greater than 36dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
RF Filter Highpass OWBP-8400-10
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RF Filter Highpass OWBP-8400-10

Model OWBP-8400-10 is a W band waveguide highpass filter with a passband frequency of 84 GHz and higher and a rejection frequency from DC to 80 GHz. The filter provides a nominal insertion loss of 0.9 dB across its passband with a low ripple and a typical rejection of 40 dB. Since the low end cutoff frequency can be changed by modifying the design, custom designs can be offered under different model numbers.