喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Switch O113
O113 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC~20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 45dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Integrated Switch O113SM3B
O113SM3B is a GaAs absorption single pole double throw switch, which can provide more than 38dB isolation and less than 2.3dB insertion loss in the whole operating frequency range. It adopts 0/-5V logic control and does not require external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.