The O497 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 18 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.