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GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O505

O505 type GaAs monolithic 4-way zero-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.5~6.0GHz, and the isolation is more than 15dB, which is very suitable for microwave hybrid integrated circuits and Multi-chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O508

O508 type GaAs monolithic 4-way zero-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 6~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.