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GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O110

O110 is an absorption type gallium arsenide pHEMT single-pole single-throw switch chip, working frequency covers DC ~ 20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 40dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O124

O124 is an absorption GaAs pHEMT single-pole, eight-throw switch chip with an operating frequency of DC to 10 GHz. The switch chip provides greater than 50dB isolation and less than 3dB insertion loss over the entire operating frequency range. Built-in 3:8 decoder, using -5V + TTL control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O142

O142 is a reflective gallium arsenide (PIN) single-pole, single-throw single-throw single-throw MMIC switch chip with an operating frequency of 4 to 26 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Integrated Switch O121SM4
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Integrated Switch O111DSM4

The O111DSM4 is a GaAs Absorption Single Pole Double Throw Switch with an operating frequency of DC~6GHz. The switch provides greater than 48dB isolation and less than 1.5dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O121SM4
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Integrated Switch O113DSM4M

The O113DSM4M is an absorption single-pole single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.