喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated 0 Degree Power O1601
The O1601 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 0.5~1.5GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O490
The O490 type GaAs monolithic 0 degree power splitter has low insertion loss, high isolation, and excellent port standing wave characteristics in the frequency range of 0.5 to 1.5 GHz. The insertion loss in the band is less than 1 dB, making it ideal for microwave applications. Hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O595
The O595 is a GaAs monolithic integrated bi-directional amplifier chip operating from 0.5-2.0GHz. It operates from a single +5V supply and provides 24dB gain and 16dBm P1dB output power at 60mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
