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GaAs Monolithic Integrated 0 Degree Power O510
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GaAs Monolithic Integrated 0 Degree Power O501

The O501 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 14 to 18 GHz. The isolation is greater than 15 dB, and is very suitable for microwave hybrid integrated circuits and multiple applications. Chip module. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated CNC Phase Shifter O339
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Monolithic Integrated CNC Phase Shifter O336D

The O336D is a GaAs 1-bit 180 degree digital phase shifter chip. Operating frequency 14 ~ 18GHz, insertion loss is less than 2.4dB. The chip uses 0/+5V logic control, external -5V power supply voltage. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated CNC Phase Shifter O339
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Monolithic Integrated CNC Phase Shifter O337

The O337 is a GaAs 6-bit digital phase shifter chip. Operating frequency 14~18GHz, insertion loss less than 8.8dB, basic phase shift -5.625°, -11.25°, -22.°5, -4°5, -9°0, -18°0, total phase shift -354.37°5. The chip uses 0/-5V logic control, no external power supply bias, no power loss. With excellent phase shift accuracy and port standing wave characteristics in the operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.