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GaN Monolithic Integrated Power Amplifier O259

GaN Monolithic Integrated Power Amplifier O255

The O255 is a GaN monolithic integrated power amplifier chip operating at 14.0-18.0 Ghz. It provides 20dB power gain and 42dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating power. 36%. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.