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腔体滤波器
无源产品
5G
GaAs Monolithic Integrated 0 Degree Power O1603
O1603 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.0~6.0GHz, and the isolation is greater than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O492
The O492 type GaAs monolithic 0 degree power splitter has a low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 6 GHz, and the isolation is greater than 13 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O497
The O497 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2 to 18 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O509
O509 type GaAs monolithic 4-way zero-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2~18GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and many Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaN Monolithic Integrated Driver Amplifier O568
The O568 is a GaN monolithically integrated driver amplifier chip operating at 2.0-6.0GHz delivering 25dB of power gain and 30dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O575
The O575 is a GaN monolithic integrated driver amplifier chip, dual power supply +28 V work, operating frequency coverage 2 ~ 6GHz. At 130mA operating current, can provide 18dB power gain, 26dBm of saturated output power.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
Monolithic Integrated (Dual) Bidirectional Amplifier O592
The O592 is a GaAs monolithic integrated low bi-directional amplifier chip that operates from 2 to 20 GHz and provides 14dB gain and 13dBm P1dB output power at a +5V, 65mA operating current.
The amplifier chip uses on-chip via metallization process to ensure good grounding, the back of the chip is metallized, suitable for eutectic sintering or conductive adhesive bonding process.
Monolithic Integrated CNC Phase Shifter O335D
The O335D is a GaAs 6-bit digital phase shifter chip. Operating frequency 2~6GHz, insertion loss is less than 14.5dB, and its basic shift phase is -5.625°, -11.25°, -22.°5, -4°5, -9°0, -18°0, total phase shift It is -354.37°5 core. The on-chip integrated driver, which uses simpler phase shift characteristics and port standing wave characteristics within the operating frequency range, is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.