喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated 0 Degree Power O1604
O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O493
The O493 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3~9 GHz, and the isolation is greater than 15 dB, which is very suitable for microwave hybrid integrated circuits and multi-chip modules.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O599
The O599 is a GaAs monolithic integrated bi-directional amplifier chip operating from 3.0-7.0GHz. It operates from a single +5V supply and provides 21dB gain and 18dBm P1dB output power at 80mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.