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GaN Monolithic Integrated Power Amplifier O259
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GaN Monolithic Integrated Power Amplifier O1198

The O1198 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.0GHz. It provides 20.5dB power gain and 40.5dBm saturated output power at continuous wave and +28V operating voltage, and the power-added efficiency is 47%. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O259
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GaN Monolithic Integrated Power Amplifier O251

The O251 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.5GHz. It provides 22dB power gain and 36dBm saturated output power at a continuous wave, +28V operating voltage, and a power-added efficiency of 48%. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.
15 dBi Gain
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增益15 dBi , 频率 5 GHz – 8.5 GHz, WR-137 Waveguide, 曲线边缘标准喇叭天线(七合一)OHC-137-15

此天线系列为标准模块天线系列,天线是以系统成套出售,包括OHC-28-15,OHC-42-15,OHC-62-15,OHC-90-15,OHC-137-15(本产品),OHC-187-15,OHC-284-15。

大洋微波 OCEANRF 曲线边缘标准喇叭天线OHC-137-15的标准增益在整个频率范围内是14 dBi至16 dBi,并带有一个方形盖法兰。它的频率范围从 5 GHz - 8.5 GHz。可根据要求提供可选连接器,包括N型和SMA、波导法兰。标准增益喇叭天线OHC-137-15的相关指标覆盖WG14, WR137 和 R70波段。它采用精密数控集成部件制造,性能准确、稳定、可靠,确保在极限条件下变形率小于0.01。串联天线的交叉极化小于-40dB。该系列天线适用于标准场强测量、标准场强发生器和天线增益测量。