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GaAs Monolithic Integrated Power Amplifier O243
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GaAs Monolithic Integrated Power Amplifier O222

The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O243
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GaAs Monolithic Integrated Power Amplifier O222G

The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O259
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GaN Monolithic Integrated Power Amplifier O253

The O253 is a GaN monolithic integrated power amplifier chip working at 8.0-12GHz. It provides 21dB power gain and 43dBm saturated output power with a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power-added efficiency is 40. %. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.
8 GHz to 18 GHz Cavity Backed Spiral Antenna OBS-80180
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频率8 GHz – 18 GHz 平面螺旋天线 OBS-80180

OBS-80180是一种紧凑、中等增益、中等驻波、圆极化的平面螺旋天线 ,设计用于在8 GHz 至 18 GHz 的频带内发射和接收装置。大洋微波平面螺旋天线具有出色的阻抗匹配和辐射方向图。 它能够接收线偏振信号和圆偏振信号。线性增益比圆形增益低3dBi。

大洋微波平面螺旋天线具有低剖面、平面孔径、无相位中心偏移、整个频带的波束宽度接近恒定、辐射带宽正常对称、携带极其灵活和重量轻的优点。随着航海及太空时代的发展,大洋微波平面螺旋天线成为电子战、测向、遥测和监视系统以及嵌入式机载应用的非常好的天线选择。该天线可用作反射器天线的宽带馈电。