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无源产品
5G
GaAs Monolithic Integrated Switch O118
O118 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 12GHz. The switch chip can provide less than 1.0dB insertion loss and greater than 36dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O119
O119 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip, operating frequency covering DC ~ 15GHz. The switch chip can provide less than 1.5dB insertion loss and greater than 38dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O124
O124 is an absorption GaAs pHEMT single-pole, eight-throw switch chip with an operating frequency of DC to 10 GHz. The switch chip provides greater than 50dB isolation and less than 3dB insertion loss over the entire operating frequency range. Built-in 3:8 decoder, using -5V + TTL control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O125
O125 is an absorption GaAs pHEMT single-pole, eight-throw switch chip, operating frequency covering DC ~ 35GHz. The switch chip provides greater than 30dB isolation and less than 3.3dB insertion loss over the entire operating frequency range. Built-in 2:4 decoder, using -5V + TTL control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O127
O127 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 15GHz. The switch chip can provide less than 2.5dB insertion loss and greater than 55dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O129
O129 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 40GHz. The switch chip can provide less than 2.5dB insertion loss and more than 25dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Integrated Switch O110DSM4M
The O110DSM4M is an absorption single-pole-single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O110SM3B
The O110SM3B is a GaAs Absorption Single-pole Single-throw Switch that provides greater than 40dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package for hermetic encapsulation, and the pin pad surface is gold-plated for reflow soldering.
Integrated Switch O110SM3BM
The O110SM3BM is an absorptive SPST switch operating at DC to 15GHz. The switch provides greater than 28dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3 mm surface mount leadless ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold plated and suitable for reflow soldering.
Integrated Switch O111DSM4
The O111DSM4 is a GaAs Absorption Single Pole Double Throw Switch with an operating frequency of DC~6GHz. The switch provides greater than 48dB isolation and less than 1.5dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O113DSM4M
The O113DSM4M is an absorption single-pole single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O113SM3B
O113SM3B is a GaAs absorption single pole double throw switch, which can provide more than 38dB isolation and less than 2.3dB insertion loss in the whole operating frequency range. It adopts 0/-5V logic control and does not require external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Switch O113SM3BM
The O113SM3BM is an absorption single-pole single-throw switch with an operating frequency of DC~16GHz. The switch provides greater than 28dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3 mm surface mount leadless ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold plated and suitable for reflow soldering.
Integrated Switch O117SM3
The O117SM3 is a GaAs reflective single pole, double throw switch with an operating frequency of DC~6GHz. The switch provides greater than 30dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. It uses 0/+5V logic control and requires no external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Switch O117SM3B
The O117SM3B is a GaAs reflective single-pole, double-throw switch with an operating frequency of DC~6GHz. The switch provides greater than 30dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. It uses 0/+5V logic control and requires no external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
N 18 GHz, 0.015″ Accept Pin Diameter, 4 Hole .500″ Square Mounting Flange Female Connector
Model D340-P15-F01 is a Female connector. The N connectors are durable, operational temperature rating of -55°C to +165°C, lowest VSWR and RF leakage (≤ -100 dB). N Connector offers the frequency from DC to 18 GHz.
Mounting method in N Connectors is 4 Hole, where the flange size is .500″ Square. This model of N Connector provides the accept pin diameter of 0.015″ inches.