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电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
Integrated Switch O110SM3BM
The O110SM3BM is an absorptive SPST switch operating at DC to 15GHz. The switch provides greater than 28dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3 mm surface mount leadless ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold plated and suitable for reflow soldering.
Integrated Switch O111DSM4
The O111DSM4 is a GaAs Absorption Single Pole Double Throw Switch with an operating frequency of DC~6GHz. The switch provides greater than 48dB isolation and less than 1.5dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O113DSM4M
The O113DSM4M is an absorption single-pole single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O113SM3B
O113SM3B is a GaAs absorption single pole double throw switch, which can provide more than 38dB isolation and less than 2.3dB insertion loss in the whole operating frequency range. It adopts 0/-5V logic control and does not require external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Switch O113SM3BM
The O113SM3BM is an absorption single-pole single-throw switch with an operating frequency of DC~16GHz. The switch provides greater than 28dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3 mm surface mount leadless ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold plated and suitable for reflow soldering.
Integrated Switch O117SM3
The O117SM3 is a GaAs reflective single pole, double throw switch with an operating frequency of DC~6GHz. The switch provides greater than 30dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. It uses 0/+5V logic control and requires no external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Switch O117SM3B
The O117SM3B is a GaAs reflective single-pole, double-throw switch with an operating frequency of DC~6GHz. The switch provides greater than 30dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. It uses 0/+5V logic control and requires no external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Switch O121SM4
The O121SM4 is an absorption single-pole four-throw switch with an operating frequency of 0.01 to 12 GHz. The switch provides greater than 29dB isolation and less than 4.0dB insertion loss over the entire perating frequency range. The built-in driver circuit uses 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4 mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The pin pad surface is gold-plated and is suitable for reflow solder mounting processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O559
The O559 is a GaAs monolithic integrated bi-directional amplifier chip operating from 8.0-12.0GHz. It operates from a single +5V supply and provides 26dB of gain and 16dBm of P1dB of output power at 110mA.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O560
The O560 is a GaAs monolithic integrated bi-directional amplifier chip working in 8.0-12.0GHz. The transmit path can provide 27dB gain and 19.5dBm P1dB output power at a +5V and 175mA operating current. The receive path is at +5V and 55mA. At operating current, it provides 26dB gain and P1dB output power over 8dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O587
The O587 is a GaAs monolithic integrated bi-directional amplifier chip operating at 8.0-14.0GHz. The transmit path provides 6dB of gain and 13dBm of P1dB output power at a +5V and 40mA operating current. The receive path is at +5V and 40mA. At operating current, it provides 6dB gain and P1dB output power above 11dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O588
The O588 is a GaAs monolithic integrated bi-directional amplifier chip operating at 8.0-14.0GHz. The transmit path provides 15dB of gain and 14dBm of P1dB output power at a +5V and 45mA operating current. The receive path is at +5V and 40mA. At operating current, it provides 6dB gain and P1dB output power above 11dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O589
The O589 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1.0 to 4.5 GHz. It provides 13dB of gain and 17dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O590
The O590 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1 to 5 GHz. It provides 19dB of gain and 16dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Monolithic Integrated (Dual) Bidirectional Amplifier O592
The O592 is a GaAs monolithic integrated low bi-directional amplifier chip that operates from 2 to 20 GHz and provides 14dB gain and 13dBm P1dB output power at a +5V, 65mA operating current.
The amplifier chip uses on-chip via metallization process to ensure good grounding, the back of the chip is metallized, suitable for eutectic sintering or conductive adhesive bonding process.
Monolithic Integrated (Dual) Bidirectional Amplifier O593
The O593 is a GaAs monolithic integrated bi-directional amplifier chip operating from 4.0-8.0GHz. It operates from a single +5V supply and provides 17dB of gain and 13dBm of P1dB output power at a 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.