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GaN Monolithic Integrated Power Amplifier O258
The O258 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 22dB power gain and 43dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. Power-added efficiency 45%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
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The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O248
The O248 is a GaN monolithic integrated power amplifier chip operating at 19-21GHz. It provides 15dB power gain and 40dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power added efficiency is 29. %.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O239
The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O214
The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O212
The O212 is a GaAs monolithic integrated power amplifier chip operating at 12.7-15.4 GHz delivering 20dB of power gain and 32dBm of saturated output power with 100us pulse width, 10% duty cycle, and + 6V operation. The power added efficiency 28%. Integrated power detector, simplifying the application circuit.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O562
The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O1196
The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O1198
The O1198 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.0GHz. It provides 20.5dB power gain and 40.5dBm saturated output power at continuous wave and +28V operating voltage, and the
power-added efficiency is 47%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.