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5G
Monolithic Integrated (Dual) Bidirectional Amplifier O587
The O587 is a GaAs monolithic integrated bi-directional amplifier chip operating at 8.0-14.0GHz. The transmit path provides 6dB of gain and 13dBm of P1dB output power at a +5V and 40mA operating current. The receive path is at +5V and 40mA. At operating current, it provides 6dB gain and P1dB output power above 11dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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