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5G
Monolithic Integrated (Dual) Bidirectional Amplifier O588
The O588 is a GaAs monolithic integrated bi-directional amplifier chip operating at 8.0-14.0GHz. The transmit path provides 15dB of gain and 14dBm of P1dB output power at a +5V and 45mA operating current. The receive path is at +5V and 40mA. At operating current, it provides 6dB gain and P1dB output power above 11dBm.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
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