喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Switch O129
O129 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 40GHz. The switch chip can provide less than 2.5dB insertion loss and more than 25dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O133
O133 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 20 ~ 40GHz. The switch chip can provide less than 1.6dB insertion loss and greater than 25dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O140
O140 is a reflective gallium arsenide (PIN) single-pole, double-throw MMIC switch chip with an operating frequency of 10 to 24 GHz. The switch chip can be easily used throughout the operating frequency band. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O141
O141 is a reflective GaAs PIN single-pole, double-throw MMIC switch chip with an operating frequency of 6 to 24 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O143
O143 is a reflective gallium arsenide PIN single-pole single-throw single-throw MMIC switch chip with an operating frequency of 0.1 to 30 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. With excellent switching characteristics and port standing wave
characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O144
O144 is a reflective gallium arsenide (PIN) single-pole, four-throw, four-throw MMIC switch that covers 0.1 to 30 GHz. The switching chip provides greater than 45dB isolation and less than 1.2dB insertion loss over the entire operating frequency range. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.