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GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O571

The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O575

The O575 is a GaN monolithic integrated driver amplifier chip, dual power supply +28 V work, operating frequency coverage 2 ~ 6GHz. At 130mA operating current, can provide 18dB power gain, 26dBm of saturated output power. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.