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5G
Ferrite Devices OIS-290310-03-20-28
Model OIS-290310-03-20-28 is a Ka band waveguide junction isolatorthat covers the frequency range of 29 to31 GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.3dB typical and a much shorter insertion length for system integration. As atrade off, the waveguide junction isolator only offers a typical isolation of20dB.
The input and output ports are WR-28 waveguides with UG-599/U flanges.
Ferrite Devices OIS-34-H
Model OIS-34-H is a WR-34,waveguide junction isolator that covers thefrequency range of 22 to 33GHz.
The full band isolator is designed andmanufactured to provide a low insertion loss of 0.45dB typical with goodflatness. The isolator also offers a moderate isolation of 19dB for systemintegration and a high power handling.
The input and output ports are WR-34waveguides with UG-1530/U flanges.
Ferrite Devices OIS-340360-03-20-28
Model OIS-340360-03-20-28 is a Ka band waveguide junction isolatorthat covers the frequency range of 34 to 36GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.3dB typical and a much shorter insertion length for system integration. As a trade off, the waveguide junction isolator only offers a typical isolation of 20dB.
The input and output ports are WR-28 waveguides with UG-599/Uflanges.
Ferrite Devices OIS-340360-05-18-28
Model OIS-340360-05-18-28 is a Ka band waveguide junction isolator that covers the frequency range of 33.6 to 36.4GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.5 dB typical and a much shorter insertion length for system integration. As a trade off, the waveguide junction isolator only offers a typical isolation of 18 dB.
The input and output ports are WR-28 waveguides withUG-599/U flanges.
Ferrite Devices OIS-370400-05-18-28
Model OIS-370400-05-18-28 is a Ka band waveguide junction isolatorthat covers the frequency range of 37 to 40GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of 0.5dB typical and a much shorter insertion length for system integration. As a trade off, the waveguide junction isolator only offers a typical isolation of 18dB.
The input and output ports are WR-28 waveguides with UG-599/Uflanges.
Ferrite Devices OIS-400440-07-18-2224F-S
Model OIS-400440-07-18-2224F-S is a Q band Iso-adapter that covers the
frequencyrange of40to44GHz.The iso-adapter offers nominal 0.7 dB insertion loss
and an18dB typical isolation.The iso-adapter is designed and fabricated to
bridge thewaveguide to coax interface directly, yet exhibits the port isolation
to improvethe system performance.
The input port of the model isWR-22waveguide withstandardUG-383/U
flange and 2.4 mm (F) connector as output port.Themodel number with the
reversed input and output ports is SNA-4034430718-2F22-S1
Ferrite Devices OIS-42
Model OIS-42 is a K band,wave guide junction isolator that covers thefrequency range of 18 to 26.5 GHz.
The full band isolator is designed andmanufactured to provide a low insertion loss of 0.3dB typical with good flatness.Compared to a Faraday isolator,it offers a much shorter insertion lengthfor systemintegration.
The isolator also offers a moderate isolation of 20dB. Theinput and output ports are WR-42waveguides with UG-595/U flanges.
Ferrite Devices OIS-460480-05-18-22
Model OIS-460480-05-18-22 is a Q band waveguide junction isolator that covers the frequency range of 46 to 48GHz.
Compared with a Faradayisolator, the waveguide junction isolator offers a lower insertion loss of0.5 dB nominal and a much shorter insertion length for systemintegration. As a tradeoff, the waveguide junction isolator only offers anisolation of 18 dB typical. The input and output ports are WR-22waveguides with UG-383/U flanges. Various configurations andfrequency ranges are offered under different model numbers.
Ferrite Devices OIS-540560-10-16-15
Model OIS-540560-10-16-15 is a V band waveguide junction isolator that covers the frequency range of 54 to 56GHz.
Compared with a Faraday isolator, the waveguidejunction isolator offers a lower insertion loss of 1.0 dBnominal and a much shorter insertion length for systemintegration. As a tradeoff, the waveguide junction isolatoronly offers a typical isolation of 16 dB. The input and outputports are WR-15 waveguides with UG-385/U flanges.
Ferrite Devices OIS-590610-10-16-15
Model OIS-590610-10-16-15 is a V band waveguide junction isolator that covers
the frequency range of 59 to 61GHz.
Compared with a Faraday isolator, the waveguidejunction isolator offers a
lower insertion loss of 1.0 dBnominal and a much shorter insertion length for
systemintegration.
As a tradeoff, the waveguide junction isolatoronly offers a typical isolation of
16 dB.
The input and outputports are WR-15 waveguides with UG-385/U flanges.
GaAs Monolithic Integrated 0 Degree Power O1600
The O1600 GaAs monolithic 3-way 0-degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 6 to 18 GHz. The isolation is greater than 15 dB, and is ideally suited for microwave hybrid integrated circuits and multiple applications. Chip module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1601
The O1601 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 0.5~1.5GHz, and the isolation is greater than 15dB, which is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1602
O1602 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 1.0~3.0 GHz. The isolation degree is more than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1603
O1603 GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 2.0~6.0GHz, and the isolation is greater than 17dB, which is very suitable for microwave hybrid integrated circuits and multichips. Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1604
O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated 0 Degree Power O1607
O1604 type GaAs monolithic 0 degree power splitter has low insertion loss and excellent port standing wave characteristics in the frequency range of 3.0 ~ 9.0 GHz, isolation greater than 18dB, and is very suitable for microwave hybrid integrated circuits and multi-chips Module.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.