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GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O125

O125 is an absorption GaAs pHEMT single-pole, eight-throw switch chip, operating frequency covering DC ~ 35GHz. The switch chip provides greater than 30dB isolation and less than 3.3dB insertion loss over the entire operating frequency range. Built-in 2:4 decoder, using -5V + TTL control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O127

O127 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 15GHz. The switch chip can provide less than 2.5dB insertion loss and greater than 55dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O129

O129 is a reflective gallium arsenide pHEMT single-pole double-throw switch chip, operating frequency covering DC ~ 40GHz. The switch chip can provide less than 2.5dB insertion loss and more than 25dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O133

O133 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 20 ~ 40GHz. The switch chip can provide less than 1.6dB insertion loss and greater than 25dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O140

O140 is a reflective gallium arsenide (PIN) single-pole, double-throw MMIC switch chip with an operating frequency of 10 to 24 GHz. The switch chip can be easily used throughout the operating frequency band. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O141

O141 is a reflective GaAs PIN single-pole, double-throw MMIC switch chip with an operating frequency of 6 to 24 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O142

O142 is a reflective gallium arsenide (PIN) single-pole, single-throw single-throw single-throw MMIC switch chip with an operating frequency of 4 to 26 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O143

O143 is a reflective gallium arsenide PIN single-pole single-throw single-throw MMIC switch chip with an operating frequency of 0.1 to 30 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O144

O144 is a reflective gallium arsenide (PIN) single-pole, four-throw, four-throw MMIC switch that covers 0.1 to 30 GHz. The switching chip provides greater than 45dB isolation and less than 1.2dB insertion loss over the entire operating frequency range. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O145

O145 is a reflective gallium arsenide (PIN) single-pole, three-throw MMIC switch chip with an operating frequency of 2 to 18 GHz. The switch chip provides greater than 30dB isolation and less than 1.2dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
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GaAs Monolithic Integrated Switch O147

O147 is a reflective gallium arsenide PIN single pole double throw MMIC switch chip, working frequency covers 2 ~ 20GHz. The switch chip provides greater than 30dB isolation and less than 1.0dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O562

The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O568

The O568 is a GaN monolithically integrated driver amplifier chip operating at 2.0-6.0GHz delivering 25dB of power gain and 30dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O570

The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O571

The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O579
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GaN Monolithic Integrated Driver Amplifier O575

The O575 is a GaN monolithic integrated driver amplifier chip, dual power supply +28 V work, operating frequency coverage 2 ~ 6GHz. At 130mA operating current, can provide 18dB power gain, 26dBm of saturated output power. The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.