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无源产品
5G
Integrated Power Amplifier O1198SM7H
The O1198SM7H is a GaN integrated power amplifier operating from 5 to 6 GHz. It provides 21dB power gain, 41dBm saturated output power, and 45% power efficiency at a +28V operating voltage.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O222GSM5
The O222GSM5 is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 35% power-added efficiency at a +8V operating voltage.
The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O222GSM7H
The O222GSM7H is a GaAs integrated power amplifier operating from 8 to 12 GHz. It provides 24dB of gain, 29dBm of saturated output power, and 42% of power-added efficiency at a +8V operating voltage.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O222SM5
The O222SM5 is a GaAs pHEMT monolithic integrated power amplifier with an operating frequency of 8-12 GHz. Under the +8V operating voltage, 20% 0dB gain, +29dBm saturated output power and 28% power additional efficiency can be provided.
The amplifier uses a 5x5mm surface mount leadless ceramic package for hermetic encapsulation. The pin pad surface is gold plated and suitable for reflow soldering processes.
Integrated Power Amplifier O242SM4
The O242SM4 is a 2.2-3.5GHz power amplifier that operates from a single supply and provides 23dB of gain and 25dBm of saturated output power at an operating voltage of +5V.The amplifier uses a 4x4mm surface-mount non-leaded ceramic package for hermetic encapsulation.
The pin pad surface is gold-plated and suitable for reflow soldering.
Integrated Power Amplifier O253SM7H
The O253SM7H is a GaN integrated power amplifier operating from 8 to 12 GHz. With a +28V operating voltage, it provides 22dB of power gain, 43dBm of saturated output power, and 38% power-added efficiency.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O259SM7H
The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Switch O110DSM4
O110DSM4 is an absorption single-pole single-throw switch, working frequency covers 0.01 ~ 12GHz. The switch provides greater than 50dB isolation and less than 2.8dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O110DSM4M
The O110DSM4M is an absorption single-pole-single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O110SM3B
The O110SM3B is a GaAs Absorption Single-pole Single-throw Switch that provides greater than 40dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package for hermetic encapsulation, and the pin pad surface is gold-plated for reflow soldering.
Integrated Switch O110SM3BM
The O110SM3BM is an absorptive SPST switch operating at DC to 15GHz. The switch provides greater than 28dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3 mm surface mount leadless ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold plated and suitable for reflow soldering.
Integrated Switch O111DSM4
The O111DSM4 is a GaAs Absorption Single Pole Double Throw Switch with an operating frequency of DC~6GHz. The switch provides greater than 48dB isolation and less than 1.5dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O113DSM4M
The O113DSM4M is an absorption single-pole single-throw switch with an operating frequency of DC ~ 12GHz. The switch provides greater than 37dB isolation and less than 2.1dB insertion loss over the entire operating frequency range. Built-in driver circuit, using 0/+5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 4x4mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering processes.
Integrated Switch O113SM3B
O113SM3B is a GaAs absorption single pole double throw switch, which can provide more than 38dB isolation and less than 2.3dB insertion loss in the whole operating frequency range. It adopts 0/-5V logic control and does not require external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.
Integrated Switch O113SM3BM
The O113SM3BM is an absorption single-pole single-throw switch with an operating frequency of DC~16GHz. The switch provides greater than 28dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3 mm surface mount leadless ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold plated and suitable for reflow soldering.
Integrated Switch O117SM3
The O117SM3 is a GaAs reflective single pole, double throw switch with an operating frequency of DC~6GHz. The switch provides greater than 30dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. It uses 0/+5V logic control and requires no external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.