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Monolithic Integrated (Dual) Bidirectional Amplifier O589
The O589 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1.0 to 4.5 GHz. It provides 13dB of gain and 17dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
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The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Driver Amplifier O568
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The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O1194
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The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
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