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腔体滤波器
无源产品
5G
Monolithic Integrated (Dual) Bidirectional Amplifier O590
The O590 is a GaAs monolithic integrated bi-directional amplifier chip operating from 1 to 5 GHz. It provides 19dB of gain and 16dBm of P1dB output power at +5V and 70mA operating current.
The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
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The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
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GaN Monolithic Integrated Driver Amplifier O570
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GaN Monolithic Integrated Driver Amplifier O579
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