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GaAs Monolithic Integrated Power Amplifier O224
The O224 is a GaAs monolithic integrated power amplifier operating at 12.8 to 14.6GHz and delivers 23dB of power gain and 32dBm of saturated output power at a + 5V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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GaAs Monolithic Integrated Power Amplifier O227
The O227 is a GaAs monolithic integrated power amplifier chip operating at 16.2-17.6 Ghz and delivering 19dB of power gain and 34.0dBm of saturated output power at a pulse width of 100us, duty cycle of 10%, and operating voltage of + 8V. The power added Efficiency of 29%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O239
The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O1194
The O1194 is a GaN monolithic integrated power amplifier chip working on 1.2-1.6GHz. It provides 26dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10% and +28V operating voltage. Power-added efficiency 50%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O214
The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O252
The O252 is a GaN monolithic integrated power amplifier chip working on 4.4-6.0GHz. It provides 22dB power gain and 43dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 48%.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Power Amplifier O1196
The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaN Monolithic Integrated Driver Amplifier O571
The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O248
The O248 is a GaN monolithic integrated power amplifier chip operating at 19-21GHz. It provides 15dB power gain and 40dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power added efficiency is 29. %.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.