GaAs Monolithic Integrated Power Amplifier O238

The O252 is a GaN monolithic integrated power amplifier chip working on 4.4-6.0GHz. It provides 22dB power gain and 43dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 48%. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.

The O248 is a GaN monolithic integrated power amplifier chip operating at 19-21GHz. It provides 15dB power gain and 40dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power added efficiency is 29. %. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

The O1193 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 24dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 40%. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

The O253 is a GaN monolithic integrated power amplifier chip working at 8.0-12GHz. It provides 21dB power gain and 43dBm saturated output power with a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power-added efficiency is 40. %. The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.