喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
Integrated Power Amplifier O1193SM7H
The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1194SM7H
The O1193SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. At +28V operating voltage, 21dB power gain, 40dBm saturated output power, and 45%power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
Integrated Power Amplifier O1195SM7H
The O1195SM7H is a GaN integrated power amplifier operating from 4.4 to 5.1 Ghz. At +28V operating voltage, it provides 19dB of power gain, 40dBm of saturated output power, and 47% of power-added efficiency.
The amplifier adopts 7mmx7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.