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5G
Integrated Power Amplifier O1194SM7H
The O1193SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. At +28V operating voltage, 21dB power gain, 40dBm saturated output power, and 45%power efficiency can be provided.
The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.
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