喇叭天线
平面螺旋天线
龙勃天线
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腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Power Amplifier O210
The O210 is a GaAs monolithic integrated power amplifier chip operating at 6.8-9.0 GHz delivering 23dB of power gain and 33dBm of saturated output power with 100us pulse width, 10% duty cycle and + 6V operation. The power added efficiency 33%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
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GaAs Monolithic Integrated Power Amplifier O227
The O227 is a GaAs monolithic integrated power amplifier chip operating at 16.2-17.6 Ghz and delivering 19dB of power gain and 34.0dBm of saturated output power at a pulse width of 100us, duty cycle of 10%, and operating voltage of + 8V. The power added Efficiency of 29%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O238
The O238 is a GaAs monolithic integrated power amplifier chip operating at 24.2-27.0GHz delivering 16dB of power gain and 33dBm of saturated output power at 6V with 27% additional power efficiency.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaAs Monolithic Integrated Power Amplifier O239
The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Power Amplifier O1198
The O1198 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.0GHz. It provides 20.5dB power gain and 40.5dBm saturated output power at continuous wave and +28V operating voltage, and the
power-added efficiency is 47%.
The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.
GaAs Monolithic Integrated Power Amplifier O222G
The O222G is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Driver Amplifier O571
The O571 is a GaN monolithic integrated driver amplifier operating at 8.0-12.0GHz delivering 16dB of power gain and 26dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaAs Monolithic Integrated Power Amplifier O242
The O242 is a GaAs monolithic integrated power amplifier chip operating at 2.2 ~ 3.5GHz, which provides 22dB power gain and 29dBm saturated output power at + 9V operating voltage with power added efficiency of 35%.
The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
GaN Monolithic Integrated Driver Amplifier O570
The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.