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GaAs Monolithic Integrated Power Amplifier O243
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GaAs Monolithic Integrated Power Amplifier O210

The O210 is a GaAs monolithic integrated power amplifier chip operating at 6.8-9.0 GHz delivering 23dB of power gain and 33dBm of saturated output power with 100us pulse width, 10% duty cycle and + 6V operation. The power added efficiency 33%. The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.
GaN Monolithic Integrated Power Amplifier O259
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GaN Monolithic Integrated Power Amplifier O255

The O255 is a GaN monolithic integrated power amplifier chip operating at 14.0-18.0 Ghz. It provides 20dB power gain and 42dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating power. 36%. The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.