喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Switch O1017D
O1017D is an Absorption GaAs pHEMT single-pole, double-throw switch chip with operating frequency covering DC~20GHz. The switching chip can provide less than 1.6dB insertion loss over the entire operating frequency range. Use 0/-5V logic control. Ideal for microwave hybrid integrated circuits and multi-chip modules as well as
low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O113
O113 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC~20GHz. The switch chip can provide less than 2.0dB insertion loss and greater than 45dB isolation across the operating frequency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O116
O116 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 100M~4GHz. The switch chip can provide less than 1.2dB insertion loss and greater than 38dB isolation across the operating frequency band. Using 0/+5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O127
O127 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 15GHz. The switch chip can provide less than 2.5dB insertion loss and greater than 55dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O133
O133 is a reflective gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 20 ~ 40GHz. The switch chip can provide less than 1.6dB insertion loss and greater than 25dB isolation across the entire operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.