GaAs Monolithic Integrated Switch O116
O116 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, working frequency covers 100M~4GHz. The switch chip can provide less than 1.2dB insertion loss and greater than 38dB isolation across the operating frequency band. Using 0/+5V logic control, no external power supply bias, no power consumption. It is often suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Categories: GaAs Monolithic Integrated Switch, GaAs 砷化镓, 射频芯片
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The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.
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