喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Switch O112
O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O141
O141 is a reflective GaAs PIN single-pole, double-throw MMIC switch chip with an operating frequency of 6 to 24 GHz. The switch chip provides greater than 45dB isolation and less than 0.8dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O147
O147 is a reflective gallium arsenide PIN single pole double throw MMIC switch chip, working frequency covers 2 ~ 20GHz. The switch chip provides greater than 30dB isolation and less than 1.0dB insertion loss over the entire operating frequency range. Built-in bias network, easy to use. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
RF Filter Highpass OWBP-6300-12
Model OWBP-6300-12 is an E band waveguide highpass filter with a passband frequency of 63 GHz and higher and a rejection frequency from DC to 59 GHz.
The filter provides a nominal insertion loss of 0.8 dB across its passband with a low ripple and a typical rejection of 40 dB. Since the low end cutoff frequency can be changed by modifying the design, custom designs can be offered under different model numbers.
RF Filter Highpass OWBP-7100-12
Model OWBP-7100-12 is an E band waveguide highpass filter with a passband frequency of 71 GHz and higher and a rejection frequency from DC to 67 GHz.
The filter provides a nominal insertion loss of 0.8 dB across its passband with a low ripple and a typical rejection of 40 dB. Since the low end cutoff frequency can be changed by modifying the design, custom designs can be offered under different model numbers.