GaAs Monolithic Integrated Switch O112

O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.