喇叭天线
平面螺旋天线
龙勃天线
电磁兼容测试天线
电缆
接头&转接头
校准件
腔体滤波器
无源产品
5G
GaAs Monolithic Integrated Switch O112
O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
GaAs Monolithic Integrated Switch O140
O140 is a reflective gallium arsenide (PIN) single-pole, double-throw MMIC switch chip with an operating frequency of 10 to 24 GHz. The switch chip can be easily used throughout the operating frequency band. With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.
The switch chip adopts on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.
Integrated Switch O110SM3B
The O110SM3B is a GaAs Absorption Single-pole Single-throw Switch that provides greater than 40dB isolation and less than 2.5dB insertion loss over the entire operating frequency range, using 0/-5V logic control.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package for hermetic encapsulation, and the pin pad surface is gold-plated for reflow soldering.
Integrated Switch O113SM3B
O113SM3B is a GaAs absorption single pole double throw switch, which can provide more than 38dB isolation and less than 2.3dB insertion loss in the whole operating frequency range. It adopts 0/-5V logic control and does not require external power supply bias and no power consumption.
With excellent switching characteristics and port standing wave characteristics over the entire operating frequency range, it is ideally suited for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems. The switch uses a 3x3mm surface-mount non-leaded ceramic package to achieve hermetic encapsulation. The surface of the pin pad is gold-plated and suitable for reflow soldering.